Modélisation des sources de bruit dans les dispositifs MOS

  • AG Bouazza
  • H Sahraoui
  • B Bouazzao
  • KE Ghaffouro
  • NEC Sari
Keywords: Flicker noise, thermal noise, modeling, modulation, channel length, induced noise, gate, MOS, MOSFET.


Modeling of noise sources in MOS devices

We present in this work an investigation of the physical origins of the two main noise sources in MOS devices. In the first part, we interest to the flicker noise and its detailed derivation’s. The thermal noise is discussed in the second part with the explanation of the channel length impact in this noise. At next, we present briefly the induced gate noise.


Journal Identifiers

eISSN: 1813-548X