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Metal oxide electron transport bilayers to improve electron transport in planar perovskite solar cells


Wegene Lema Lachore
Dinsefa Mensur Andoshe
Mulualem Abebe Mekonnen
Newayemedhin A. Tegegne
Fekadu Gashaw Hone

Abstract

In this work, we investigate the use of metal oxide bilayer ETLs, including ZnO/SnO₂, ZnO/WO₃, and SnO₂/WO₃, to enhance charge transport and suppress recombination in planar PSCs. The proposed bilayer architecture introduces improved interfacial contact, reduced defect density, and favorable energy level alignment compared to single-layer ETLs. Perovskite films grown on these bilayers were carefully examined with XRD, FTIR, SEM, UV-visible spectroscopy, photoluminescence, and impedance analysis. The films showed a stable tetragonal rutile crystal structure and similar light absorption edges around 752 nm, while photoluminescence quenching (up to 72.8% for ZnO/WO₃) indicated more efficient charge extraction. Electrical measurements confirmed improved ohmic contact and reduced resistivity, with ZnO/WO₃ showing the best performance. Among the studied devices, the ITO/ZnO/WO₃/MAPbI₃/MoO₃/Al configuration exhibited the best performance, achieving a power conversion efficiency (PCE) of 2.80%, with an open-circuit voltage (VOC) of 481.9 mV, a short-circuit current density (JSC) of 14.9 mA/cm², and a fill factor (FF) of 0.39. In contrast, devices based on single-layer ETLs showed significantly lower efficiencies, with ZnO and WO₃ yielding PCEs of 1.39% and 1.23%, respectively.  Overall, the bilayer ETLs facilitated smoother charge transfer, minimized recombination losses, and enhanced interfacial quality, demonstrating a simple yet effective approach to boost the efficiency of perovskite solar cells compared to conventional single-layer ETLs.


KEY WORDS: Solar cells, Perovskite, Electron transport bilayer, Charge dynamics


Bull. Chem. Soc. Ethiop. 2026, 40(11), 2415-2432                                                        


DOI: https://dx.doi.org/10.4314/bcse.v40i11.10                                                                 


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eISSN: 1726-801X
print ISSN: 1011-3924