Influence of complexing agent (Na2EDTA) on chemical bath deposited Cu4SnS4 thin films

  • Anuar Kassim Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia
  • Saravanan Nagalingam Department of Bioscience and Chemistry, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, 53300 Kuala Lumpur, Malaysia
  • Zulkefly Kuang Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia
  • Atan Sharif Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia
  • Tan Wee Tee Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia
  • Ho Soon Min Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia
Keywords: Chemical bath deposition, Complexing agents, Thin films, X-ray diffraction

Abstract

The quality of thin film is influenced by the presence of complexing agents such as Na2EDTA. The Cu4SnS4 thin films were deposited onto indium tin oxide glass substrate by chemical bath deposition method. The structural, morphological and optical properties of the deposited films have been studied using X-ray diffraction, atomic force microscopy and UV-Vis spectrophotometer, respectively. The XRD data showed that the films have a polycrystalline and orthorhombic structure. It also indicated that the most intense peak at 2q = 30.2° which belongs to (221) plane of Cu4SnS4. The film deposited with 0.05 M Na2EDTA showed good uniformity, good surface coverage with bigger grains and produced higher absorbance value. The band gap energy varies with the variation of Na2EDTA concentration which ranging from 1.56-1.60 eV. Deposition at concentration of 0.05 M Na2EDTA proved to offer a reasonably good Cu4SnS4 thin film.

 

KEY WORDS: Chemical bath deposition, Complexing agents, Thin films, X-ray diffraction

 

 

Bull. Chem. Soc. Ethiop. 2010, 24(2), 259-266.
Published
2010-05-26
Section
Articles

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eISSN: 1726-801X
print ISSN: 1011-3924