The effect of gate length on SOI-MOSFETS operation

  • J Baedi
  • H Arabshahi

Abstract

The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a layer of buried silicon oxide added to isolate the device body has been simulated. Three transistors with gate lengths of 100, 200 and 500 nm were simulated. Simulations showed that with a fixed channel length, when the gate length is increased, the output drain current characteristics slope is increased and therefore the transistor transconductance increases. Moreover, with increasing gate length, the effect of the drain voltage on the drain current was reduced, which resulted in reduced drain induced barrier lowering.

Keywords: SOI-MOSFET, silicon, transconductance, drain voltage

International Journal of Natural and Applied Sciences, 6(3): 373-376, 2010

Author Biographies

J Baedi
Physics Department, Tarbiat Moallem University, Sabzevar, Iran
H Arabshahi
Physics Department, Ferdowsi University of Mashhad, Mashhad, Iran
Section
Articles

Journal Identifiers


eISSN: 0794-4713