Investigation of InGaN/Si double junction tandem solar cells

  • F Bouzid
  • L Hamlaoui


In this work, the solar power conversion efficiency of InGaN/Si double junction tandem solar cells was investigated under 1-sun AM1.5 illumination, using realistic material parameters. With this intention, the current-voltage curves are calculated for different front recombination velocities and the influence of the bottom cell thickness on efficiency has been studied. The results show that a front recombination velocity value of 1e3cm/s is most advantageous and the use of relatively thick bottom cell is necessary to obtain conversion efficiency greater than 27%, at 300°k cell temperature. This efficiency will decrease as the operating temperature increase.

Keywords: Photovoltaic, Efficiency, Carrier lifetimes, Recombination velocity, Temperature.


Journal Identifiers

eISSN: 1112-9867