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Thin film transport properties vacuum evaporation activation energy Hall mobility
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Transport Properties Of Cu<sub>2</sub>S<sub>n</sub>S<sub>3</sub> Thin Films
Abstract
A single source vacuum evaporation process has been employed to prepare thin films of Cu2SnS3. Electrical Hall measurements using Van der Pauw technique have revealed that film resistivity was a strong function of the substrate temperature for film deposition. The activation energy for the resistivity was 0.268 eV for films deposited at 300 K, 0.162 eV for films deposited at 423 K and 0.059 eV for films deposited at 573 K. The Hall mobility was observed to decrease with an increase in temperature due to grain boundary scattering. Room temperature mobility was 110 cm2V-1s-1, reducing to 28 cm2V-1s-1 at 593 K. The barrier height within the grain was determined to be 0.051 eV.
Key words: Thin film, transport properties, vacuum evaporation, activation energy, Hall mobility
Nig. J. of Pure & Appl. Physics Vol.3 2004: 75-78
Key words: Thin film, transport properties, vacuum evaporation, activation energy, Hall mobility
Nig. J. of Pure & Appl. Physics Vol.3 2004: 75-78
