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Heat Flow in a Finite Isolated Pulsed Avalanche Semiconductor Diode Heat Sink for Short-Term Applications


COG Obah

Abstract

An analytical time solution of temperature rise of a finite heat sink under adiabatic boundary, conditions is proposed for partial system applications requiring short-term and low duty operation of pulsed high-power high-efficiency avalanche semiconductor devices. The temperature rise as a function of the heat sink size is computed, and useful practical design curves for a specified operation time presented.



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eISSN: 2467-8821
print ISSN: 0331-8443