Modelling of Trapped Plasma Mode Oscillations in a p+ n – n+ Silicon Diode

  • COG Oboh

Abstract

This paper proposes an approach for obtaining a relatively simple set of equations which apply to the description of TRAPATT phenomenon and applies it to model trappedplasma mode oscillations in a p+ n – n+ silicon diode. Typical voltage, conduction current, electric field and carrier charge wave-forms are presented for a square wave of drive current. The diffusion transport phenomenon is shown to affect the diode operating characteristics. The subperiods of the diode voltage and conduction current are found to be useful parameters in dilineating the diode operating frequency limits. The influence of the diode physical parameters and the effects of the package circuit parasitic on the diode performance are explored, and curves for practical design presented. The predicted RF performance shows good agreement with experimental measurement for a typical L-band TRAPATT oscillator.


Author Biography

COG Oboh
Department of Electrical & electronic Engineering University of Nigeria, Nsukka, Nigeria
Published
2013-12-01
Section
Articles

Journal Identifiers


eISSN: 2467-8821
print ISSN: 0331-8443