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Distinguishing Traits Of Thin Films Of Antimony-Doped Cadmium Selenide (Cdse/Sb) On Glass Substrate Versus Fluorine Tin Oxide (Fto) Through Spray Pyrolysis: An Investigative Analysis


ISHIWU S M U
NWORIE I C
AGBO P E
OJOBEAGU A O
OTAH P B
ELEKWA C A

Abstract

Thin films of antimony-doped cadmium selenide (CdSe/Sb) were fabricated using the spray pyrolysis technique on both glass and fluorine tin oxide (FTO) substrates at a deposition temperature of 200ºC. Sodium selenosulphite (Na2SeSo3) served as a stable source of Se2- ions, and to ensure complete desolation and achieve ion-by-ion deposition, Ethylenediamine tetraacetic acid (EDTA) was employed as a stabilizer and complexing agent. Antimony and cadmium were sourced from their respective chlorides. The optical and solid-state properties were determined through absorption and transmittance measurements in the wavelength range of 300 to 1500 nm. A comparison of the spectral properties between films deposited on glass and FTO substrates revealed distinct characteristics. Films on glass exhibited a continuous spectral nature, while those on FTO displayed a quantized energy level characteristic with a lower band gap ranging between 2.65 to 2.80 eV. In contrast, films on glass substrates demonstrated a higher band gap in the range of 3.7 eV to 4.0 eV. The observed lower band gap and quantized energy levels in films on FTO substrates suggest their suitability for photovoltaic applications by enhancing the absorption of a broader range of solar radiation. In contrast, films on glass with a higher band gap are more suitable for applications requiring selective light absorption or filtering, such as solar thermal collectors or windows, enabling control over specific wavelengths while maintaining transparency. The ability to adjust the band gap through film deposition conditions allows tailored material optimization for diverse solar technologies, impacting efficiency, and manufacturing costs based on specific requirements and considerations.


 


 


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eISSN: 2992-4464
print ISSN: 1118-0579