Studies on a-Se/n-Si and a-Te/n-Si heterojunctions

  • SE Iyayi Department of Physics, Ambrose Alli University, P.M.B. 14, Ekpoma, Edo State, Nigeria
  • AA Oberafo Sheda Science and Technology Complex, P.M.B. 186, Garki, Abuja, Nigeria


Heterojunctions are fabricated by depositing amorphous selenium (a-Se) and amorphous tellurium (a-Te) films on n-type single (n-Si) wafers by the method of vacuum evaporation. The silicon wafers have surface orientation of (111). Resistivity of each silicon wafer is 5Ω-cm and carrier concentration of 8.30 x 1014cm-3. Two of the junction devices are annealed in a vacuum for half an hour. Current-voltage measurements are made at room temperature (298K). Rectification properties are observed in all the junctions. Barrier heights of a-Se/n-Si junctions are higher than a-Te/n-Si junctions. The current density in annealed junctions is lower than in as-deposited (unannealed) counterpart.

Journal of Applied Sciences and Environmental Management Vol. 9(1) 2005: 143-145

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eISSN: 2659-1502
print ISSN: 1119-8362