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Energy states in dilute <i>InAs<sub>1-х</sub>Bi<sub>х</sub>/InAs</i> Single Quantum Well (SQW) laser
Abstract
In this paper, starting with the band engineering of the dilute bismide InAs1-хBiх/InAs, we investigated the room temperature emission wavelengths of InAs1-хBiх/InAs single quantum well (SQW). The results of our calculations reveal that the emission wavelengths of InAs1-хBiх/InAs fall in the range λ = 3.7- 5.1μm which can be tuned by the Bi mole fraction of the InAs1-хBiх/InAs well material between. This thus, offers a technologically important Mid Wave Infrared (MWIR) InAs1-хBiх/InAs lasers for varying applications.
