Intersubband optical gain spectra in compressively strained InGaAs/GaInP quantum well

Abstract

In this paper, the theoretical analyses of the optical intersubband transitions in strained InGaAs/GaInP quantum well are investigated. A simplified method of the treatment of the compressive strain effects incorporation for the wavefunction and thus the intersubband dipole matrix is discussed. The effects of Gallium mole fraction, quantum well width and compressive strained on the band properties, intersubband transitions and optical absorption/gain spectra are shown to be pronounced. Thus this present investigation could become a good guild for tuning the optoelectronic properties of many quantum devices utilizing intersubband electronics in their various technological applications.