Photoluminescence properties of the red phosphor YInGe2O7:Eu3+
Eu3+-doped YInGe2O7 phosphors were prepared via a solid-state reaction with metal oxides and their excitation and emission spectra were measured at room temperature. The results showed that pure-phase YInGe2O7 could be obtained after firing at 1250 °C. The maximum photoluminescence intensity of YInGe2O7:Eu3+ phosphor was achieved when doped with 40 mol% Eu3+ ions. Compared with Y2O2S:0.05Eu3+, the Y0.60InGe2O7:Eu3+0.40 phosphor obtained showed intense red-emission lines at 616 nm, corresponding to forced electric dipole 5D0 → 7F2 transitions of Eu3+ under 394 nm light excitation. The International Commission on Illumination chromaticity coordinates of the phosphors (x = 0.644, y = 0.356) of Y0.60InGe2O7:Eu3+0.40 were close to National Television Standard Committee standard values. As such, the synthesized phosphors may find applications in near ultraviolet InGaN chip-based white light-emitting diodes.
KEY WORDS: Optical materials, X-Ray diffraction, Luminescence, Solid state reaction
Bull. Chem. Soc. Ethiop. 2013, 27(2), 315-319.