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Numerical simulation of hole injection in high barrier metal-semiconductor short diodes
A numerical investigation is carried out on effects of minority carriers on the transport parameters of one-dimensional metal-semiconductor short diodes under highly injecting conditions. The results show that at a donor concentration Nd=1014 cm-3 and total current density J=0.1 μAcm-2, the hole injection ratio,λh , decreases rapidly by a factor of more than 80% within 2μm semiconductor layer from the interface. Furthermore, a comparison of the two-carrier model adopted in this work with the Schottky model reveals a discrepancy of 30% in the lnJ-V characteristics of a diode of 0.92 eV barrier height.
Journal of the Nigerian Association of Mathematical Physics Vol. 8 2004: pp. 69-74