An algorithm for numerical solution of Anisimov coupled differential equation of heat transfer from electron to lattice

Abstract

This paper proposes a way of obtaining non-equilibrium transient electron-lattice temperature of several thousands of Kelvin in semiconductor thin films by applying satisfactorily boundary conditions to Anisimov coupled differential equations .This is possible by adjusting some of the parameters in the equations and tailoring the characteristics of semiconductors to achieve an enhanced transient carrier concentration and transverse spread in energy that will enhance the performance of the free-electron laser technology.

JONAMP Vol. 11 2007: pp. 239-252