Conduction Mechanism in Amorphous As2S3

  • RK Nkum
  • FK Ampong
  • F Boakye
Keywords: Amorphous semiconductor, hopping, mobility edge

Abstract

The conduction mechanism in amorphous As2S3 has been studied by investigating the variation of the electrical resistivity over the temperature range 300 – 450 K. The electrical resistivity is characterised by a mobility gap of 2.15 eV over the temperature range investigated. The dc conductivity provides evidence of conduction by excitation of charge carriers into the band  edges near the mobility edges. The results also give the possibility of conduction by a phonon-assisted hopping of polarons between localised states.

Keywords: Amorphous semiconductor, hopping, mobility edge

Published
2013-03-15
Section
Articles

Journal Identifiers


eISSN: 0855-0395