Effects of Aluminium and Tungsten Co-Doping on the Optical Properties of VO2 Based Thin Films

  • Cephas J Lyobha College of Natural and Mathematical Sciences, Physics Department, The University of Dodoma, P. O. Box 338, Dodoma, Tanzania
  • Nuru R Mlyuka Solar Energy Group, Physics Department, University of Dar es Salaam, P. O. Box 35063 Dar es Salaam, Tanzania
  • Margaret E Samiji Solar Energy Group, Physics Department, University of Dar es Salaam, P. O. Box 35063 Dar es Salaam, Tanzania
Keywords: Transition temperature, luminous transmittance, tungsten-aluminium co-doping, vanadium dioxid

Abstract

Aluminium and tungsten co-doped vanadium dioxide (VO2:W:Al) thin films were deposited by DC reactive magnetron sputtering technique. In this work we report on the effects of aluminium and tungsten co–doping on the optical properties of vanadium dioxide (VO2) based thin films with a view of combining both increased luminous transmittance (Tlum) and lowered transition temperature (τc). The effect of aluminium and tungsten co-doping on semiconductor-metal transition of vanadium dioxide films was investigated and compared with tungsten doped and undopedVO2films. Spectral transmittances of the films were obtained using Shimadzu SolidSpec-3700 DUV UV-VIS-NIR spectrophotometer. The results revealed that the transmittance of tungsten and aluminium co–doped vanadium dioxide using two Al pellets showed a peak at about 54% in the visible spectral range with fairly good switching characteristics and a transition temperature of 61 oC.

Keywords: Transition temperature, luminous transmittance; tungsten-aluminium co-doping; vanadium dioxid;

 

Published
2018-12-31
Section
Articles

Journal Identifiers


eISSN: 2507-7961
print ISSN: 0856-1761